| PART |
Description |
Maker |
| 50PF40 52PF40 50PFR40W 52PFR40W 50PFR80 52PFR80 52 |
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A
|
Vishay Siliconix
|
| 95PF4012 |
Standard Recovery Diodes Generation 2 DO-5 (Stud Version), 95 A
|
Vishay Siliconix
|
| 50PF40-12 |
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A
|
Vishay Siliconix
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| IKW15N120T2 |
IGBT in 2nd generation TrenchStop? technology with soft, fast recovery anti-parallel Emitter Controlled Diode
|
Infineon Technologies A...
|
| APT12GT60KR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 25A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STD7NM50N-1 STP7NM50N STF7NM50N STD7NM50N |
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.70楼? - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| VSC8113QB |
ATM/SONET/SDH 622 Mb/s Transceiver Mux/Demux with Integrated Clock Generation and Clock Recovery
|
ETC
|
| GC2510 GC2511 GC2512 GC2513 GC2516 GC2515 GC2520 G |
Step Recovery Diodes (SRD)
|
Microsemi
|
| GC2525 |
SILICON, STEP RECOVERY DIODE
|
MICROSEMI CORP-LOWELL
|
